M29F400BT-55N

The M29F400BT-55N is one member of the M29F400BT family which is designed as the 4 Mbit (512Kb x8 or 256Kb x16, boot block) single supply flash memory. And this device can be divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

Features of the M29F400BT-55N are:(1)single 5V±10% supply voltage for program, erase and read operations;(2)access time: 45ns;(3)programming time--8ms per byte/word typical;(4)11 memory blocks:1 boot block (top or bottom location) and 2 parameter and 8 main blocks;(5)program/erase controller: embedded byte/word program algorithm, embedded multi-block/chip erase algorithm, status register polling and toggle bits and ready/busy output pin;(6)erase suspend and resume modes: read and program another block during erase suspend;(7)unlock bypass program command: faster production/batch programming;(8)temporary block unprotection mode.

The absolute maximum ratings of the M29F400BT-55N can be summarized as:(1)temperature under bias:-50 to 125 °C;(2)storage temperature:-65 to 150 °C;(3)input or output voltage:-0.6 to 6 V;(4)supply voltage:-0.6 to 6 V;(5)identification voltage:-0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29F400BT-55N, please download the datasheet in www.seekic.com or www.chinaicmart.com.