MFG:ST Package Cooled:2000 D/C:TSOP
MFG: ST
Package Cooled: 2000
D/C: TSOP
Description: The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and pr...
The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application.
| Symbol | Parameter |
Value |
Unit |
| TA | Ambient Operating Temperature (3) |
40 to 125 |
|
| TBIAS | Temperature Under Bias |
50 to 125 |
|
| TSTG | Storage Temperature |
-65 to +150 |
|
| VIO(2) | Input or Output Voltages |
0.6 to 7 |
V |
| VCC | Supply Voltage |
0.6 to 7 |
V |
| V(A9, E, G, RP) (2) | A9, E, G, RP Voltage |
0.6 to 13.5 |
V |
M29F400T
PDF/DataSheet Download
The M29F400BT-55N is one member of the M29F400BT family which is designed as the 4 Mbit (512Kb x8 or 256Kb x16, boot block) single supply flash memory. And this device can be divided into blocks that can be erased independently so it is possible to preserve ...
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