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M312L5128MT0

Features: • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Differential clock inputs(CK and CK)• DLL aligns DQ and DQS transition with CK transition• Programm...

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SeekIC No. : 004404699 Detail

M312L5128MT0: Features: • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Differentia...

M312L5128MT0 Data Sheet

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Part Number:
M312L5128MT0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• tRFC(Refresh row cycle time) = 120ns
• Serial presence detect with EEPROM
• 1,200mil height & double sided


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD supply relative to Vss
VDD,VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
A/ch
Power dissipation
PD
1.5 * # of component
Short circuit current
IOS
50
mA

Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
          Functional operation should be restricted to recommended operating condition.
          Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




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