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Part Number: M368L5623MTN-CA2

 

 

 

 

 

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M368L5623MTN-CA2 Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN , VOUT
-0.5 ~ 3.6
V
Voltage on VDD& VDDQ supply relative to VSS
VDD , VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1.5 * # of component
W
Short circuit current
IOS
50
mA

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
           Functional operation should be restricted to recommend operation condition.
           Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

M368L5623MTN-CA2 Features

· Power supply :   Vdd:  2.5V ±0.2V, Vddq:  2.5V ±0.2V
· Double-data-rate architecture; two data transfers per clock cycl
· Bidirectional data strobe  [DQ] (x4,x8)  &  [L(U)DQS] (x16)
· Differential clock inputs(CK and CK )
· DLL aligns  DQ and DQS transition with CK transition
· Programmable Read latency  2, 2.5 (clock)
· Programmable  Burst length (2, 4, 8)
· Programmable  Burst type (sequential & interleave)
· Edge aligned data output, center aligned data input
· Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
· Serial presence detect with EEPROM
· PCB : Height 1,250 (mil) & double  sided 
· SSTL_2 Interface

M368L5623MTN-CA2 datasheet

M368L5623MTN-CA2
PDF/DataSheet Download

  • Datasheet: M368L5623MTN-CA2
  • File Size: 258950 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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