Purchase M36D0R6040T0, In-stock M36D0R6040T0 From SeekIC.
Part Number: M36D0R6040T0
Description: The M36D0R6040T0 and M36D0R6040B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash me...
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M36D0R6040T0
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DataSheet
General Description
M36D0R6040T0 General Description
The M36D0R6040T0 and M36D0R6040B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and a 16-Mbit Pseudo SRAM, the M69AR024B. Recommended operating conditions do not allow more than one memory to be active at the same time.
The memory is offered in a Stacked TFBGA67 (12 x 8mm, 8x8 ball array, 0.8mm pitch) package. In addition to the standard version, the packages are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive.
All packages are compliant with Lead-free soldering processes.
The memory is supplied with all the bits erased (set to '1').
M36D0R6040T0 Maximum Ratings
| Symbol | Parameter | Value | Unit | |
| Min | Max | |||
| TA | Ambient Operating Temperature | 30 | 85 | °C |
| TBIAS | Temperature Under Bias | -40 | 125 | °C |
| TSTG | Storage Temperature | -65 | 155 | °C |
| TLEAD | Lead Temperature during Soldering | (1) | °C | |
| VIO | Input or Output Voltage | -0.5 | VDD(1)+0.6 | V |
| VDDF | Flash Memory Core Supply Voltage | -0.2 | 2.45 | V |
| VDDP | PSRAM Supply Voltage | -0.2 | 2.45 | V |
| VPPF | Flash Memory Program Voltage | -0.2 | 14 | V |
| IO | Output Short Circuit Current | 100 | mA | |
| tVPPFH | Time for VPPF at VPPFH | 100 | hours | |
M36D0R6040T0 Features
`MULTI-CHIP PACKAGE
1 die of 64 Mbit (4Mb x 16) Flash Memory
1 die of 16 Mbit (1Mb x 16) Pseudo SRAM
`SUPPLY VOLTAGE
VDDF = VDDP = 1.7V to 1.95V
`LOW POWER CONSUMPTION
`ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code (Top Flash Configuration), M36D0R6040T0: 8810h
Device Code (Bottom Flash Configuration), M36D0R6040B0: 8811h
`PACKAGE
Compliant with Lead-Free Soldering Processes
Lead-Free Versions
`PROGRAMMING TIME
8µs by Word typical for Fast FactoryProgram
Double/Quadruple Word Program option
Enhanced Factory Program options
`MEMORY BLOCKS
Multiple Bank Memory Array: 4 Mbit Banks
Parameter Blocks (Top location)
`ASYNCHRONOUS READ
Asynchronous Page Read mode
Random Access: 70ns
`DUAL OPERATIONS
Program Erase in one Bank while Read in others
No delay between Read and Write operations
`BLOCK LOCKING
All blocks locked at Power-up
Any combination of blocks can be locked
WPF for Block Lock-Down
`SECURITY
128-bit user programmable OTP cells
64-bit unique device number
`COMMON FLASH INTERFACE (CFI)
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`ACCESS TIME: 70ns
`LOW STANDBY CURRENT: 110µA
`DEEP POWER DOWN CURRENT: 10µA
1 die of 64 Mbit (4Mb x 16) Flash Memory
1 die of 16 Mbit (1Mb x 16) Pseudo SRAM
`SUPPLY VOLTAGE
VDDF = VDDP = 1.7V to 1.95V
`LOW POWER CONSUMPTION
`ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code (Top Flash Configuration), M36D0R6040T0: 8810h
Device Code (Bottom Flash Configuration), M36D0R6040B0: 8811h
`PACKAGE
Compliant with Lead-Free Soldering Processes
Lead-Free Versions
`PROGRAMMING TIME
8µs by Word typical for Fast FactoryProgram
Double/Quadruple Word Program option
Enhanced Factory Program options
`MEMORY BLOCKS
Multiple Bank Memory Array: 4 Mbit Banks
Parameter Blocks (Top location)
`ASYNCHRONOUS READ
Asynchronous Page Read mode
Random Access: 70ns
`DUAL OPERATIONS
Program Erase in one Bank while Read in others
No delay between Read and Write operations
`BLOCK LOCKING
All blocks locked at Power-up
Any combination of blocks can be locked
WPF for Block Lock-Down
`SECURITY
128-bit user programmable OTP cells
64-bit unique device number
`COMMON FLASH INTERFACE (CFI)
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`ACCESS TIME: 70ns
`LOW STANDBY CURRENT: 110µA
`DEEP POWER DOWN CURRENT: 10µA
M36D0R6040T0 Connection Diagram
M36D0R6040T0
PDF/DataSheet Download
- Datasheet: M36D0R6040T0
- File Size: 336947 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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The M36D0R6040T0 and M36D0R6040B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and a 16-Mbit Pseudo SRAM, the M69AR024B. Recommended operating conditions do not allow more than one memory to be ...
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