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MFG:ST Package Cooled:BGA
Part Number: M36W832TE
MFG: ST
Package Cooled: BGA
Description: The M36W832TE is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit bo...
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M36W832TE
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DataSheet
General Description
M36W832TE General Description
The M36W832TE is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit boot block Flash memory and an 8 Mbit
SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.
The memory is offered in a Stacked LFBGA66 (12x8mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').
M36W832TE Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
Min |
Max | |||
|
TA |
Ambient Operating Temperature (1) |
40 |
85 |
°C |
|
TBIAS |
Temperature Under Bias |
40 |
125 |
°C |
|
TSTG |
Storage Temperature |
55 |
150 |
°C |
|
VIO |
Input or Output Voltage |
0.5 |
VDDQF +0.5 |
V |
|
VDDF , VDDQF |
Flash Supply Voltage |
0.6 |
4.1 |
V |
|
VPPF |
Program Voltage |
0.6 |
13 |
V |
|
VDDS |
SRAM Supply Voltage |
0.5 |
3.6 |
V |
Note: 1. Depends on range.
M36W832TE Features
SUPPLY VOLTAGE
VDDF = 2.7V to 3.3V
VDDS = VDDQF = 2.7V to 3.3V
VPPF = 12V for Fast Program (optional)
ACCESS TIMES: 70ns and 85ns
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M36W832TE: 88BAh
Bottom Device Code, M36W832BE: 88BBh
VDDF = 2.7V to 3.3V
VDDS = VDDQF = 2.7V to 3.3V
VPPF = 12V for Fast Program (optional)
ACCESS TIMES: 70ns and 85ns
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M36W832TE: 88BAh
Bottom Device Code, M36W832BE: 88BBh
M36W832TE Connection Diagram
M36W832TE
PDF/DataSheet Download
- Datasheet: M36W832TE
- File Size: 919402 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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