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Part Number: M381L2923DUM

 

 

 

 

 

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M381L2923DUM Maximum Ratings

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN,VOUT
-0.5 ~ 3.6 V
Voltage on VDD & VDDQ supply relative to VSS VDD,VDDQ -1.0 ~ 3.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 1.5 * # of component W
Short circuit current IOS 50 mA

M381L2923DUM Features

• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
• Differential clock inputs(CK and CK )
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency : DDR333(2.5 Clock), DDR400(3 Clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil) & single (256, 512MB), double (1GB) sided
• SSTL_2 Interface
• 66pin TSOP II Pb-Free package
• RoHS compliant

M381L2923DUM datasheet

M381L2923DUM-CB3
PDF/DataSheet Download

  • Datasheet: M381L2923DUM-CB3
  • File Size: 474777 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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