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Part Number: M381L5623MTM

 

 

 

 

 

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M381L5623MTM Maximum Ratings

Parameter
Symbol
Rating
Units
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD&VDDQ supply pin relative to VSS
VDD,VDDQ
-1.0 ~ 3.6
V
Storage Temperature
TSTG
-55 to ~150
°C
Power dissipation
PD
1.5 * # of component
W
Short circuit current
IOS
50
mA

M381L5623MTM Features

Power supply :   Vdd:  2.5V ±0.2V, Vddq:  2.5V± 0.2V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe  [DQ] (x4,x8)  &  [L(U)DQS] (x16)
Differential clock inputs(CK and CK)
DLL aligns  DQ and DQS transition with CK transition
Programmable Read latency  2, 2.5 (clock)
Programmable  Burst length (2, 4, 8)
Programmable  Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height 1,250 (mil) & double  sided 
SSTL_2 Interface

M381L5623MTM datasheet

M381L5623MTM-CA2
PDF/DataSheet Download

  • Datasheet: M381L5623MTM-CA2
  • File Size: 256116 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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