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Part Number: M464S0924DTS
Description: The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Sams...


Description: The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Sams...
The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glassepoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S0924DTS is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
| Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to Vss |
VIN, VOUT |
-0.5 ~ 3.6 |
V |
| Voltage on VDD & VDDQ supply relative to VSS |
VDD, VDDQ |
-1.0 ~ 3.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
|
| Power dissipation |
PD |
4 |
W |
| Short circuit current |
IOS |
50 |
mA |
M464S0924DTS
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