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Part Number: M464S0924DTS

 

 

 

 

Description: The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Sams...


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M464S0924DTS General Description


The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glassepoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S0924DTS is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets.

Synchronous design allows precise cycle control with the use  of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.

M464S0924DTS Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
4
W
Short circuit current
IOS
50
mA

Note :Permanent device damage may occur if" ABSOLUTE MAXIMUM RATINGS "are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

M464S0924DTS Features

• Performance range
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
   Latency (Access from column address)
   Burst length (1, 2, 4, 8 & Full page)
   Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,000mil) , double sided component

M464S0924DTS datasheet

M464S0924DTS
PDF/DataSheet Download

  • Datasheet: M464S0924DTS
  • File Size: 87133 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

Find M464S0924DTS Suppliers

  • ·M464S0924DTS-C1H
  • SAMSUNG [Samsung semiconductor] 
  • 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 
  • 87133 KB
  • M464S0924DTS-C1H Datasheet Download
  • ·M464S0924DTS-C1L
  • SAMSUNG [Samsung semiconductor] 
  • 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 
  • 87133 KB
  • M464S0924DTS-C1L Datasheet Download
  • ·M464S0924DTS-C7A
  • SAMSUNG [Samsung semiconductor] 
  • 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 
  • 87133 KB
  • M464S0924DTS-C7A Datasheet Download
  • ·M464S0924DTS-C7C
  • SAMSUNG [Samsung semiconductor] 
  • 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 
  • 87133 KB
  • M464S0924DTS-C7C Datasheet Download
  • ·M464S0924DTS-L1H
  • SAMSUNG [Samsung semiconductor] 
  • 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 
  • 87133 KB
  • M464S0924DTS-L1H Datasheet Download
  • ·M464S0924DTS-L1L
  • SAMSUNG [Samsung semiconductor] 
  • 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 
  • 87133 KB
  • M464S0924DTS-L1L Datasheet Download
  • ·M464S0924DTS-L7A
  • SAMSUNG [Samsung semiconductor] 
  • 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 
  • 87133 KB
  • M464S0924DTS-L7A Datasheet Download
  • ·M464S0924DTS-L7C
  • SAMSUNG [Samsung semiconductor] 
  • 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 
  • 87133 KB
  • M464S0924DTS-L7C Datasheet Download

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