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Part Number: M464S1724DTS
Description: The Samsung M464S1724DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Sam...
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M464S1724DTS
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DataSheet
General Description
M464S1724DTS General Description
The Samsung M464S1724DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S1724DTS consists of eight CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S1724DTS is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
M464S1724DTS Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
| Voltage on VDD & VDDQ supply relative to VSS |
VDD, VDDQ |
-1.0 ~ 4.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
|
| Power dissipation |
PD |
8 |
W |
| Short circuit current |
IOS |
50 |
mA |
Note :Permanent device damage may occur if" ABSOLUTE MAXIMUM RATINGS "are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
M464S1724DTS Features
• Performance range
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,250mil) , double sided component
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,250mil) , double sided component
M464S1724DTS
PDF/DataSheet Download
- Datasheet: M464S1724DTS
- File Size: 90059 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·M464S0924DTS
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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- ·M464S0924DTS-C1H
- SAMSUNG [Samsung semiconductor]
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- ·M464S0924DTS-C1L
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- ·M464S0924DTS-C7A
- SAMSUNG [Samsung semiconductor]
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- ·M464S0924DTS-C7C
- SAMSUNG [Samsung semiconductor]
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- ·M464S0924DTS-L1H
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB
- ·M464S0924DTS-L1L
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB
- ·M464S0924DTS-L7A
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB
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