M464S1724FTS-C(L)7A Maximum Ratings
M464S1724FTS-C(L)7A Features
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
M464S1724FTS-C(L)7A datasheet

- ·M464S0924DTS
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB

- ·M464S0924DTS-C1H
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB

- ·M464S0924DTS-C1L
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB

- ·M464S0924DTS-C7A
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB

- ·M464S0924DTS-C7C
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB

- ·M464S0924DTS-L1H
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB

- ·M464S0924DTS-L1L
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB

- ·M464S0924DTS-L7A
- SAMSUNG [Samsung semiconductor]
- 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
- 87133 KB

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