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M470L6423EN0-C(L)B3
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M47 Series Datasheet download

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Part Number: M470L6423EN0-C(L)B3

M470L6423EN0-C(L)B3 Maximum Ratings

Parameter	Symbol	Value	Unit
Voltage on any pin relative to Vss	V_IN, V_OUT	-0.5 ~ 3.66	V
Voltage on V_DD & V_DDQ supply relative to VSS	V_DD, V_DDQ	-1.0 ~ 3.6	V
Storage temperature	T_STG	-55 ~ +150
Power dissipation	P_D	1.5 * # of component	W
Short circuit current	I_OS	50	mA

Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

M470L6423EN0-C(L)B3 Features

• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil), double (512MB) sided
• SSTL_2 Interface
• 54pin sTSOP(II)-300 package

M470L6423EN0-C(L)B3 datasheet

M470L1624FT0
PDF/DataSheet Download

Datasheet: M470L1624FT0
File Size: 270388 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Click here to Download

·M470L1624FT0-CA2
SAMSUNG [Samsung semiconductor]
DDR SDRAM SODIMM
270388 KB
·M470L1624FT0-CB0
SAMSUNG [Samsung semiconductor]
DDR SDRAM SODIMM
270388 KB
·M470L1624FT0-CB3
SAMSUNG [Samsung semiconductor]
DDR SDRAM SODIMM
270388 KB
·M470L1624FU0-CA2
SAMSUNG [Samsung semiconductor]
DDR SDRAM SODIMM
270810 KB
·M470L1624FU0-CB0
SAMSUNG [Samsung semiconductor]
DDR SDRAM SODIMM
270810 KB
·M470L1624FU0-CB3
SAMSUNG [Samsung semiconductor]
DDR SDRAM SODIMM
270810 KB
·M470L2923BN0-CA2
SAMSUNG [Samsung semiconductor]
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
291405 KB
·M470L2923BN0-CB0
SAMSUNG [Samsung semiconductor]
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
291405 KB

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