Purchase M470L6524BT(U)0-C(L)CC, In-stock M470L6524BT(U)0-C(L)CC From SeekIC.
- Table of contents:
M470L6524BT(U)0-C(L)CC
-
Suppliers
DataSheet
General Description
M470L6524BT(U)0-C(L)CC Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to Vss |
VIN, VOUT |
-0.5 ~ 3.66 |
V |
| Voltage on VDD & VDDQ supply relative to VSS |
VDD, VDDQ |
-1.0 ~ 3.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
|
| Power dissipation |
PD |
1.5 * # of component |
W |
| Short circuit current |
IOS |
50 |
mA |
Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
M470L6524BT(U)0-C(L)CC Features
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height - 256MB(non ECC/ECC SS, 1250mil), 512MB/1GB(non ECC DS, 1250mil, ECC DS, 1400mil)
• SSTL_2 Interface
• 66pin TSOP II & 54pin sTSOP II (Leaded & Pb-Free(RoHS compliant)) package
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height - 256MB(non ECC/ECC SS, 1250mil), 512MB/1GB(non ECC DS, 1250mil, ECC DS, 1400mil)
• SSTL_2 Interface
• 66pin TSOP II & 54pin sTSOP II (Leaded & Pb-Free(RoHS compliant)) package
M470L1624FT0
PDF/DataSheet Download
- Datasheet: M470L1624FT0
- File Size: 270388 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·M470L1624FT0-CA2
- SAMSUNG [Samsung semiconductor]
- DDR SDRAM SODIMM
- 270388 KB
- ·M470L1624FT0-CB0
- SAMSUNG [Samsung semiconductor]
- DDR SDRAM SODIMM
- 270388 KB
- ·M470L1624FT0-CB3
- SAMSUNG [Samsung semiconductor]
- DDR SDRAM SODIMM
- 270388 KB
- ·M470L1624FU0-CA2
- SAMSUNG [Samsung semiconductor]
- DDR SDRAM SODIMM
- 270810 KB
- ·M470L1624FU0-CB0
- SAMSUNG [Samsung semiconductor]
- DDR SDRAM SODIMM
- 270810 KB
- ·M470L1624FU0-CB3
- SAMSUNG [Samsung semiconductor]
- DDR SDRAM SODIMM
- 270810 KB
- ·M470L2923BN0-CA2
- SAMSUNG [Samsung semiconductor]
- DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
- 291405 KB
- ·M470L2923BN0-CB0
- SAMSUNG [Samsung semiconductor]
- DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
- 291405 KB
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