M50FW080

Features: ` SUPPLY VOLTAGE VCC = 3V to 3.6V for Program, Erase and Read Operations VPP = 12V for Fast Program and Fast Erase (optional)` TWO INTERFACES Firmware Hub (FWH) Interface for embedded operation with PC Chipsets Address/Address Multiplexed (A/A Mux) Interface for programming equipment...

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SeekIC No. : 004405459 Detail

M50FW080: Features: ` SUPPLY VOLTAGE VCC = 3V to 3.6V for Program, Erase and Read Operations VPP = 12V for Fast Program and Fast Erase (optional)` TWO INTERFACES Firmware Hub (FWH) Interface for embedded o...

floor Price/Ceiling Price

Part Number:
M50FW080
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

` SUPPLY VOLTAGE
     VCC = 3V to 3.6V for Program, Erase and Read Operations
     VPP = 12V for Fast Program and Fast Erase (optional)
` TWO INTERFACES
     Firmware Hub (FWH) Interface for embedded operation with PC Chipsets
     Address/Address Multiplexed (A/A Mux)
     Interface for programming equipment compatibility
` FIRMWARE HUB (FWH) HARDWARE INTERFACE MODE
     5 Signal Communication Interface supporting Read and Write Operations
     Hardware Write Protect Pins for Block Protection
     Register Based Read and Write Protection
     5 Additional General Purpose Inputs for platform design flexibility
     Synchronized with 33MHz PCI clock
` PROGRAMMING TIME
     10s typical
     Quadruple Byte Programming Option
` 16 UNIFORM 64 KByte MEMORY BLOCKS
` PROGRAM/ERASE CONTROLLER
     Embedded Byte Program and Block/Chip Erase algorithms
     Status Register Bits
` PROGRAM and ERASE SUSPEND
     Read other Blocks during Program/Erase Suspend
     Program other Blocks during Erase Suspend
` FOR USE in PC BIOS APPLICATIONS
` ELECTRONIC SIGNATURE
     Manufacturer Code: 20h
     Device Code: 2Dh
 


Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Min.
Max.
Unit
TSTG
Storage Temperature
-65
150
TLEAD
Lead Temperature during Soldering
See note 1
VIO
Input or Output range 2
-0.5
VCC + 0.6
V

VCC

Supply Voltage
-0.5
4
V

VPP

Program Voltage
-0.6
13
V
VESD
Electrostatic Discharge Voltage (Human Body model) 3
-2000
2000
V

Note: 1. Compliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU
2. Minimum voltage may undershoot to 2V for less than 20ns during transitions. Maximum voltage may overshoot to VCC + 2V for less than 20ns during transitions.
3. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500 )




Description

The M50FW080 is an 8 Mbit (1Mbit x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.

The memory M50FW080 is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected individually to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end volatile memory that can be read, erased and reprogrammed.

These operations M50FW080 can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected individually to prevent accidental Program  or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Two different bus interfaces M50FW080 are supported by the memory. The primary interface, the Firmware Hub (or FWH) Interface, uses Intel's proprietary FWH protocol. This has been designed to remove the need for the ISA bus in current PC Chipsets; the M50FW080 acts as the PC BIOS on the Low Pin Count bus for these PC Chipsets.

The secondary interface M50FW080, the Address/Address Multiplexed (or A/A Mux) Interface, is designed to be compatible with current Flash Programmers for production line programming prior to fitting to a PC Motherboard.




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