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Part Number: M53230224CJ2

 

 

 

 

Description: The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D c...


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M53230224CJ2 General Description


The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or
0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53230224D is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

M53230224CJ2 Maximum Ratings

Rating
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1 to +7.0
V
Voltage on VCC supply relative to VSS
VCC
-1 to +7.0
V
Storage Temperature
Tstg
-55 to +150
Power Dissipation
Pd
4
W
Short Circuit Output Current
IOS
50
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional
   operation should be restricted to the conditions as detailed in the operational sections of this
   data  sheet. Exposure to absolute maximum rating conditions for intended periods may affect
   device reliability.

M53230224CJ2 Features

• Part Identification
   - M53230224CE2-C(1024 cycles/16ms Ref, SOJ, Solder)
   - M53230224CJ2-C(1024 cycles/16ms Ref, SOJ, Gold)
• Extended Data Out
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDPin & pinout
• PCB : Height(750mil), double sided component

M53230224CJ2 datasheet

M5300
PDF/DataSheet Download

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