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Part Number: M54523FP

 

MFG: MIT

 

 

Description: M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits...


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M54523FP General Description


M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54523FP Maximum Ratings

Symbol
Parameter
 Conditions
Ratings
Unit
VCEO Clamping-emitter voltage Ourrent,H
-0.5to+50
V
Ic Collector current Ourrent per circuit ouptput ,L
500
mA
VI Input voltage  
-0.5to+30
V
IF Clamping diode forward current  
500
mA
VR Clamping diode reverse voltage  
50
V
Pd Power dissipation Ta = 25°C, when mounted on board
1.47(P)/1.00(FP)
W
Topr Operating temperature  
-20to+75
°C
Tstg Storage temperature  
-55to+125

M54523FP Features

 ` High breakdown voltage (BVCEO50V)
 `  High-current driving (IC(max) = 500mA)
 ` With clamping diodes
 ` Driving available with PMOS IC ouput
 ` Wide operating temperature range (Ta = 20 to +75°C)

M54523FP Typical Application

Drives of relays and printers, digit drives of indication elements(LEDs and lamps), and interfaces between standard
MOS-bipolar logic IC

M54523FP Connection Diagram

M54523FP Connection Diagram

M54523FP datasheet

M54523FP
PDF/DataSheet Download

  • Datasheet: M54523FP
  • File Size: 48227 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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