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Part Number: M54526FP

 

MFG: MIT

 

 

Description: M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits...


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M54526FP General Description


M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54526FP Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
VCEO Clamping-emitter voltage Ourrent,H
-0.5TP+50
V
Ic Collector current Ourrent per circuit ouptput ,L
500
mA
VI Input voltage  
-0.5to+30
V
IF Clamping diode forward current  
500
mA
VR Clamping diode reverse voltage  
50
V
Pd Power dissipation Ta = 25°C, when mounted on board
1.47(P)/1.00(FP)
W
Topr Operating temperature  
-20to+75
°C
Tstg Storage temperature  
-55to+125

M54526FP Features

` High breakdown voltage (BVCEO 50V)
` High-current driving (Ic(max) = 500mA)
` With clamping diodes
`Driving available with PMOS IC output of 8-18V
`Wide operating temperature range (Ta = 20 to +75°C)

M54526FP Typical Application

Drives of relays and printers, digit drives of indication elements(LEDs and lamps), and MOS-bipolar logic IC interfaces

M54526FP Connection Diagram

M54526FP  Connection Diagram

M54526FP datasheet

M54526FP
PDF/DataSheet Download

  • Datasheet: M54526FP
  • File Size: 84567 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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