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MFG:MIT  Package Cooled:DIP  

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Part Number: M54532P

 

MFG: MIT

Package Cooled: DIP

 

Description: M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits ...


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M54532P General Description


M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54532P Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
VCEO Collector-emitter voltage Output, H
-0.5to+50
V
Ic Collector current Current per circuit output, L
1.5
A
VI Input voltage  
-0.5to+10
V
VR Clamping diode reverse voltage  
50
V
IF Clamping diode forward current Pulse Width 10ms, Duty Cycle 5%
1.5
A
Pulse Width 100ms, Duty Cycle 5%
1.25
Pd Power dissipation Ta = 25°C, when mounted on board
1.92(P)/1.00(FP)
W
Topr Operating temperature  
20to +75
Tstg Storage temperature  
-55to+125

M54532P Features

Á High breakdown voltage (BVCEO  50V)
Á High-current driving (Ic(max) = 1.5A)
Á With clamping diodes
Á Wide operating temperature range (Ta = 20 to +75°C)

M54532P Typical Application

Drives of relays and printers, digit drives of indication elements(LEDs and lamps), and power amplification.

M54532P Connection Diagram

M54532P  Connection Diagram

M54532P datasheet

M54532P
PDF/DataSheet Download

  • Datasheet: M54532P
  • File Size: 78795 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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    M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made ofNPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

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