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MFG:MIT  Package Cooled:DIP  

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Part Number: M54562P

 

MFG: MIT

Package Cooled: DIP

 

Description: M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are ...


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M54562P General Description


M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

M54562P Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
VCEO #
Collector-emitter voltage     Output, L
0.5 ~ +50
V
VS
Supply Voltage
 
50
V
VI
Input Voltage
 
0.5 ~ +30
V
IO
Output Current
Current per circuit output, H
500
mA
IF
Clamping diode forward current  
500
mA
VR #
Clamping diode reverse voltage  
50
V
PD
Power Dissipation
   Ta=25°C Mounted on a board
1.79(P)/1.10(FP)
W
Topr
Operating temperature
 
20 ~ +75
Tstg
Storage Temperature
 
55 ~ +125

M54562P Features

 High breakdown voltage (BVCEO  50V)
High-current driving (Io(max) = 500mA)
With output clamping diodes
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Wide operating temperature range (Ta = 20 to +75°C)
Output current-sourcing type

M54562P Typical Application

Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors

M54562P Connection Diagram

M54562P  Connection Diagram

M54562P datasheet

M54562P
PDF/DataSheet Download

  • Datasheet: M54562P
  • File Size: 83635 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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