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Part Number: M54563P

 

MFG: MIT

Package Cooled: DIP

 

Description: M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP...


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M54563P General Description


M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.

M54563P Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
VCEO #
Collector-emitter voltage Output, L
0.5 ~+50
V
VS
Supply voltage  
50
W
VI
Input voltage  
0.5 ~ +10
V
IO
Output current Current per circuit output, H
500
mA
IF
Clamping diode forward current  
500
mA
VR #
Clamping diode reverse voltage  
50
V
Pd
Power dissipation Ta = 25°C, when mounted on board
1.79(P)/1.10(FP)
W
Topr
Operating temperature  
20 ~ +75
°C
Tstg
Storage temperature  
55 ~ +125
°C

M54563P Features

` High breakdown voltage (BVCEO 50V)
` High-current driving (Io(max) = 500mA)
`With clamping diodes
`Driving available with PMOS IC output of 6 ~ 16V or with TTL output
` Wide operating temperature range (Ta = 20 to +75°C)
`Output current-sourcing type

M54563P Typical Application

Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors

M54563P Connection Diagram

M54563P  Connection Diagram

M54563P datasheet

M54563P
PDF/DataSheet Download

  • Datasheet: M54563P
  • File Size: 97679 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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