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Part Number: M54567FP

 

MFG: MIT

 

 

Description: M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits ...


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M54567FP General Description


M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54567FP Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
VCC
Supply voltage  
10
V
VCEO
Collector-emitter voltage Output, H
0.5 ~+50
V
IC
Collector current Current per circuit output, L
1.5
A
VI
Input voltage  
0.5 ~ +30
V
VR
Clamping diode reverse voltage  
50
V
IF
Clamping diode forward current Pulse Width 10ms, Duty Cycle 5%
1.5
A
Pulse Width 100ms, Duty Cycle5%
1.0
Pd
Power dissipation Ta = 25°C, when mounted on board
1.79(P)/1.10(FP)
W
Topr
Operating temperature  
20 ~ +75
°C
Tstg
Storage temperature  
55 ~ +125
°C

M54567FP Features

` High breakdown voltage (BVCEO 50V)
`High-current driving (Ic(max) = 1.5A)
` With clamping diodes
`Driving available with NMOS IC output
` Wide operating temperature range (Ta = 20 to +75°C)

M54567FP Typical Application

Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification

M54567FP Connection Diagram

M54567FP  Connection Diagram

M54567FP datasheet

M54567FP
PDF/DataSheet Download

  • Datasheet: M54567FP
  • File Size: 83102 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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