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MFG:MIT  Package Cooled:DIP  

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Part Number: M54585P

 

MFG: MIT

Package Cooled: DIP

 

Description: M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits...


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M54585P General Description


M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54585P Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
VCEO
Collector-emitter voltage Output, H
0.5 ~ +50
V
IC
Collector current Current per circuit output, L
500
mA
VI
Input voltage  
0.5 ~ +30
V
IF
Clamping diode forward current  
500
mA
VR
Clamping diode reverse voltage  
50
V
Pd
Power dissipation Ta = 25°C, when mounted on board
1.79(P)/1.10(FP)
W
Topr
Operating temperature  
20 ~ +75
°C
Tstg
Storage temperature  
55 ~ +125
°C

M54585P Features

`High breakdown voltage (BVCEO 50V)
`High-current driving (Ic(max) = 500mA)
` With clamping diodes
`Driving available with TTL output or with PMOS IC output
` Wide operating temperature range (Ta = 20 to +75°C)

M54585P Typical Application

Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC interfaces

M54585P Connection Diagram

M54585P  Connection Diagram

M54585P datasheet

M54585P
PDF/DataSheet Download

  • Datasheet: M54585P
  • File Size: 74969 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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