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MFG:MIT  Package Cooled:SMD20  

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Part Number: M54587FP

 

MFG: MIT

Package Cooled: SMD20

 

Description: M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington tra...


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M54587FP General Description


M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54587FP Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
VCC
Supply voltage  
10
V
VCEO
Collector-emitter voltage Output, H
0.5 ~ +50
V
VI
Input voltage  
0.5 ~ VCC
V
IC
Collector current Current per circuit output, L
500
mA
IF
Clamping diode forward current  
500
mA
VR
Clamping diode reverse voltage  
50
V
Pd
Power dissipation Ta = 25°C, when mounted on board
1.79/1.1
W
Topr
Operating temperature  
20 ~ +75
°C
Tstg
Storage temperature  
55 ~ +125
°C

M54587FP Features

` High breakdown voltage (BVCEO 50V)
` High-current driving (IC(max) = 500mA)
`"L" active level input
` With input diode
` With clamping diodes
` Wide operating temperature range (Ta = 20 to +75°C)

M54587FP Typical Application

Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and MOS-bipolar logic IC interfaces

M54587FP Connection Diagram

M54587FP  Connection Diagram

M54587FP datasheet

M54587FP
PDF/DataSheet Download

  • Datasheet: M54587FP
  • File Size: 45069 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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