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Part Number: M54HCT688
Description: The M54/74HCT688 utilizes silicon gate C2MOS technology to achieve operating speeds equival...


Description: The M54/74HCT688 utilizes silicon gate C2MOS technology to achieve operating speeds equival...
The M54/74HCT688 utilizes silicon gate C2MOS technology to achieve operating speeds equivalent to LSTTL devices. Along with the low power dissipation and high noise immunity of standard C2MOS integrated circuit, it possesses the driving capability of 10 LSTTL load. The M54/74HCT688 compares bit for bit two 8-bit words applied on inputs P0 - P7 and inputs Q0 - Q7 and indicates whether or not they are equal. A single active low enable is provided to facilitate cascading several packages to enable comparison of words greater than 8 bits.
This integrated circuit has input and output characteristics that are fully compatible with 54/74 LSTTL logic families. M54/74HCT devices are designed to directly interface HSC2MOS systems with TTL and NMOS components. They are also plug in replacements for LSTTL devices giving a reduction of power consumption.
All inputs are equipped with protection circuit against static discharge and transient excess voltage.
|
Symbol |
Parameter |
Value |
Unit |
|
VCC |
Supply Voltage |
-0.5 to +7 |
V |
|
VI |
DC Input Voltage |
-0.5 to VCC + 0.5 |
V |
|
VO |
DC Output Voltage |
-0.5 to VCC + 0.5 |
V |
|
IIK |
DC Input Diode Current |
± 20 |
mA |
|
IOK |
DC Output Diode Current |
± 20 |
mA |
|
IO |
DC Output Source Sink Current Per Output Pin |
± 25 |
mA |
|
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
|
PD |
Power Dissipation |
500 (*) |
mW |
|
Tstg |
Storage Temperature |
-65 to +150 |
°C |
|
TL |
Lead Temperature (10 sec) |
300 |
°C |
M54HCT688
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