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Part Number: M58BF008
Description: The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the ...


Description: The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the ...
The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the block level and programmed in-system. Family members are configured during product testing for a specific Synchronous or Asynchronous Write mode, a Burst default of Wrap or No-wrap and for Critical Word X = 3 or 4 and Burst Word Y = 1 or 2 latency times. The Main memory array matrix allows each of the 32 equal blocks of 256 Kbit to be erased separately and re-programmed without affecting other blocks. The memory features a 256 Kbit Overlay block having the same address space as the first Main memory block. The Overlay block provides a secure storage area that is controlled by special Instructions and an external input.A separate supply VDDQ allows the Input/Output signals to be at 3.3V levels, while the main supply VDD is 5V.
|
Symbol |
Parameter |
Value
|
Unit |
|
TA |
Ambient Operating Temperature |
-40to125 |
°C |
|
TBIAS |
Temperature Under Bias |
-40to125 |
°C |
|
TSTG |
Storage Temperature |
-55to150 |
°C |
|
VIO |
Input or Output Voltage |
-0.6toVDDQ+0.6
|
V |
|
VDD,VDDQ |
Supply Voltage |
-0.6TO7 |
V |
|
VPP |
Program Voltage |
-0.6to13.5 |
V |
M58BF008
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