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MFG:Numonyx/ST Micro  Category:Integrated Circuits (ICs)  

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Part Number: M58BW16FB4T3T

Category: Integrated Circuits (ICs)

MFG: Numonyx/ST Micro

 

 

Descriptions: IC FLASH 16MB 45NS 80PQFP AUTO

Price Break

500
2500
5000

Unit Price

1.40000
1.28000
1.25000

Extended Price

700.00
3200.00
6250.00

(All prices are in USD) Prices for reference only
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M58BW16FB4T3T General Description

IC FLASH 16MB 45NS 80PQFP AUTO

M58BW16FB4T3T Parameters

Technical/Catalog InformationM58BW16FB4T3T
VendorNumonyx/ST Micro
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH
Memory Size16M (512K x 32)
Speed45nS
InterfaceParallel
Package / Case80-PQFP
PackagingTape & Reel (TR)
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 125°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names M58BW16FB4T3T
M58BW16FB4T3T
M58BW16FB4T3TTR ND
M58BW16FB4T3TTRND
M58BW16FB4T3TTR

M58BW16FB4T3T datasheet

M581
PDF/DataSheet Download

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Related Part Number

M58BW16FB4T3T Relative Products

  • M58BW16FB4T3F

    M58BW16FB4T3F

    IC FLASH 16MB 45NS 80PQFP AUTO

  • M58BW032DT

    M58BW032DT

    The M58BW032B/D is a 32Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double-Word basis using a 3.0V to 3.6V VDD supply for the circuit and a VDDQ supply down to 1.6V for the Input and Output b...

  • M58BW032DB

    M58BW032DB

    The M58BW032B/D is a 32Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double-Word basis using a 3.0V to 3.6V VDD supply for the circuit and a VDDQ supply down to 1.6V for the Input and Output b...

  • M58BW032BT

    M58BW032BT

    The M58BW032B/D is a 32Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double-Word basis using a 3.0V to 3.6V VDD supply for the circuit and a VDDQ supply down to 1.6V for the Input and Output b...

  • M58BW032BB

    M58BW032BB

    The M58BW032B/D is a 32Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double-Word basis using a 3.0V to 3.6V VDD supply for the circuit and a VDDQ supply down to 1.6V for the Input and Output b...

  • M58BW016FT

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    The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ suppl...

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