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Part Number: M58WR064ET
Description: The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and pro...
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M58WR064ET
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General Description
M58WR064ET General Description
The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.
The device features an asymmetrical block architecture. M58WR064E has an array of 135 blocks, and is divided into 4 Mbit banks. There are 15 banks each containing 8 main blocks of 32 KWords, and one parameter bank containing 8 parameter blocks of 4 KWords and 7 main blocks of 32 KWords. The Multiple Bank Architecture allows Dual Operations, while programming or erasing in one bank, Read operations are possible in other banks. Only one bank at a time is allowed to be in Program or Erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architecture is summarized in Table 2, and the memory maps are shown in Figure 4. The Parameter Blocks are located at the top of the memory address space for the M58WR064ET, and at the bottom for the M58WR064EB.
Each block can be erased separately. Erase can be suspended, in order to perform program in any other block, and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles using the supply voltage VDD. There are two Enhanced Factory programming commands available to speed up programming.
Program and Erase commands are written to the Command Interface of the memory. An internal Program/Erase Controller takes care of the timings necessary for program and erase operations.
The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards. The device supports synchronous burst read and asynchronous read from all blocks of the memory array; at power-up the device is configured for asynchronous read. In synchronous burst mode, data is output on each clock cycle at frequencies of up to 54MHz.
The device features an Automatic Standby mode. When the bus is inactive during Asynchronous Read operations, the device automatically switches to the Automatic Standby mode. In this condition the power consumption is reduced to the standby value IDD4 and the outputs are still driven.
The M58WR064E features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is an additional hardware protection against program and erase. When VPP VPPLK all blocks are protected against program or erase. All blocks are locked at Power- Up.
The device includes a Protection Register and a Security Block to increase the protection of a system's design. The Protection Register is divided into two segments: a 64 bit segment containing a unique device number written by ST, and a 128 bit segment One-Time-Programmable (OTP) by the user. The user programmable segment can be permanently protected. The Security Block, parameter block 0, can be permanently protected by the user. Figure 5, shows the Security Block and Protection Register Memory Map.
The memory is offered in a VFBGA56, 7.7 x 9 mm 0.75 mm ball pitch package and is supplied with all the bits erased (set to '1').
M58WR064ET Maximum Ratings
| Value | ||||
| Symbol | Parameter | Min | Max | Unit |
| TA | Ambient Operating Temperature | 40 | 85 | |
| TBIAS | Temperature Under Bias | 40 | 125 | |
| TSTG | Storage Temperature | 65 | 155 | |
| VIO | Input or Output Voltage | 0.5 | VDDQ+0.6 | V |
| VDD | Supply Voltage | 0.2 | 2.45 | V |
| VDDQ | Input/Output Supply Voltage | 0.2 | 3.6 | V |
| VPP | Program Voltage | 0.2 | 14 | V |
| IO | Output Short Circuit Current | 100 | mA | |
| tVPPH | Time for VPP at VPPH | 100 | hours | |
M58WR064ET Features
`SUPPLY VOLTAGE
VDD = 1.65V to 2.2V for Program, Erase and Read
VDDQ = 1.65V to 3.3V for I/O Buffers
VPP = 12V for fast Program (optional)
`SYNCHRONOUS / ASYNCHRONOUS READ
Synchronous Burst Read mode: 54MHz
Asynchronous/ Synchronous Page Read mode
Random Access: 70, 80, 100 ns
`PROGRAMMING TIME
8µs by Word typical for Fast Factory Program
Double/Quadruple Word Program option
Enhanced Factory Program options
`MEMORY BLOCKS
Multiple Bank Memory Array: 4 Mbit Banks
Parameter Blocks (Top or Bottom location)
`DUAL OPERATIONS
Program Erase in one Bank while Read in others
No delay between Read and Write operations
`BLOCK LOCKING
All blocks locked at Power up
Any combination of blocks can be locked
WP for Block Lock-Down
`SECURITY
128 bit user programmable OTP cells
64 bit unique device number
One parameter block permanently lockable
`COMMON FLASH INTERFACE (CFI)
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M58WR064ET: 8810h
Bottom Device Code, M58WR064EB: 8811h
VDD = 1.65V to 2.2V for Program, Erase and Read
VDDQ = 1.65V to 3.3V for I/O Buffers
VPP = 12V for fast Program (optional)
`SYNCHRONOUS / ASYNCHRONOUS READ
Synchronous Burst Read mode: 54MHz
Asynchronous/ Synchronous Page Read mode
Random Access: 70, 80, 100 ns
`PROGRAMMING TIME
8µs by Word typical for Fast Factory Program
Double/Quadruple Word Program option
Enhanced Factory Program options
`MEMORY BLOCKS
Multiple Bank Memory Array: 4 Mbit Banks
Parameter Blocks (Top or Bottom location)
`DUAL OPERATIONS
Program Erase in one Bank while Read in others
No delay between Read and Write operations
`BLOCK LOCKING
All blocks locked at Power up
Any combination of blocks can be locked
WP for Block Lock-Down
`SECURITY
128 bit user programmable OTP cells
64 bit unique device number
One parameter block permanently lockable
`COMMON FLASH INTERFACE (CFI)
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M58WR064ET: 8810h
Bottom Device Code, M58WR064EB: 8811h
M58WR064ET
PDF/DataSheet Download
- Datasheet: M58WR064ET
- File Size: 896222 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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