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Part Number: M65608

 

 

 

 

Description: The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel brings the solutio...


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M65608 General Description


The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an extremely low standby supply current (Typical value = 0.2 A) with a fast access time at 30 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise.

The M65608E is processed according to the methods of the latest revision of the MIL STD 883 (class B or S), ESA SCC 9000 or QML.

M65608 Maximum Ratings

Supply voltage to GND potential:..........................-0.5V + 7.0V
DC input voltage: ..............................GND - 0.5V to VCC + 0.5
DC output voltage high Z state: ........GND - 0.5V to VCC + 0.5
Storage temperature:..................................... -65C to +150C
Output current into outputs (low): .................................. 20 mA
Electro statics discharge voltage: ............................... > 2001V
(MIL STD 883D method 3015.3)

M65608 Features

• Operating Voltage: 5V
• Access Time: 30, 45 ns
• Very Low Power Consumption
  Active: 250 mW (Typ)
  Standby: 1 W (Typ)
  Data Retention: 0.5 W (Typ)
• Wide Temperature Range: -55C to +125C
• 400 Mils Width Package
• TTL Compatible inputs and Outputs
• Asynchronous
• Single 5V Supply
• Equal Cycle and Access Time
• Gated Inputs:
  No Pull-up/down
  Resistors Are Required
• QML Q and V with SMD 5962-89598

M65608 Connection Diagram

M65608  Connection Diagram

M65608 datasheet

M65608E
PDF/DataSheet Download

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