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MFG:ATMEL D/C:08+
Part Number: M65609E
MFG: ATMEL
D/C: 08+
Description: The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.Atmel brings the...
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M65609E
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DataSheet
General Description
M65609E General Description
The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems.
Utilizing an array of six transistors (6T) memory cells, the M65609E combines an extremely low standby supply current (Typical value = 20 A) with a fast access time at 40 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise.
The M65609E is processed according to the methods of the latest revision of the MIL STD 883 (class B or S), ESA SCC 9000 or QML.
It is produced on the same process as the MH1RT sea of gates series.
M65609E Maximum Ratings
Supply Voltage to GND Potential ............................ -0.5V + 5V
DC Input Voltage.............................. GND - 0.3V to VCC + 0.3
DC Output Voltage High Z State ...... GND - 0.3V to VCC + 0.3
Storage Temperature ................................. -65°C to + 150°C
Output Current Into Outputs (Low) .............................. 20 mA
Electro Statics Discharge Voltage.............................. > 2001V
(MIL STD 883D Method 3015.3)
DC Input Voltage.............................. GND - 0.3V to VCC + 0.3
DC Output Voltage High Z State ...... GND - 0.3V to VCC + 0.3
Storage Temperature ................................. -65°C to + 150°C
Output Current Into Outputs (Low) .............................. 20 mA
Electro Statics Discharge Voltage.............................. > 2001V
(MIL STD 883D Method 3015.3)
M65609E Features
• Operating Voltage: 3.3V
• Access Time: 40 ns
• Very Low Power Consumption
Active: 180 mW (Max)
Standby: 70 W (Typ)
• Wide Temperature Range: -55°C to +125°C
• 400 Mils Width Package
• TTL Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.35 Micron Process
• Latch-up Immune
• 200 Krads capability
• SEU LET Better Than 3 MeV
• Access Time: 40 ns
• Very Low Power Consumption
Active: 180 mW (Max)
Standby: 70 W (Typ)
• Wide Temperature Range: -55°C to +125°C
• 400 Mils Width Package
• TTL Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.35 Micron Process
• Latch-up Immune
• 200 Krads capability
• SEU LET Better Than 3 MeV
M65609E Connection Diagram
M65609E
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- Datasheet: M65609E
- File Size: 261221 KB
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