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Part Number: M66252FP

 

MFG: MIT

 

 

Description: The M66252P/FP is a high-speed line memory with a FIFO(First In First Out) structure of 1152-word

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M66252FP General Description


The M66252P/FP is a high-speed line memory with a FIFO(First In First Out) structure of 1152-word × 8-bit configuration which uses high-performance silicon gate CMOS process technology.

It has separate clock, enable and reset signals for write and read and is most suitable as a buffer memory between
devices with different data processing throughput.

M66252FP Maximum Ratings

Symbol
Parameter
Conditions
Rating
Unit
Vcc Supply voltage
Reference pin: GND
-0.5to+7.0
V
VI Input voltage
0.5 toVcc+0.5
V
Vo Output voltage
0.5 toVcc+0.5
V
Pd Power dissipation Ta = 25°C
550(Note 1)
mW
Tstg Storage temperature  
-65 to +150
°C

Note 1: Ta  62°C are derated at 8.8mW/°C (24P4Y)
             Ta  51°C are derated at 7.5mW/°C (24P2W)

M66252FP Features

• Memory construction ........................................................
          ....................... 1152words x 8bits (dynamic memory)
• High-speed cycle ............................................ 50ns (min.)
• High-speed access ........................................ 40ns (max.)
• Output hold ....................................................... 5ns (min.)
• Fully independent, asynchronous write and read operations
• Variable-length delay bit
• Output .................................................................... 3-state

M66252FP Typical Application

Digital photocopiers, high-speed facsimiles, laser beam printers.

M66252FP Connection Diagram

M66252FP  Connection Diagram

M66252FP datasheet

M66252FP
PDF/DataSheet Download

  • Datasheet: M66252FP
  • File Size: 149272 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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