M67204

Features:

First-in first-out dual port memory
2048 * 9 organisation (M 67203)
4096 * 9 organisation (M 67204)
Fast access time
  mmercial : 20*, 25, 35, 45, 55 ns
  dustrial and automotive : 25*, 35, 45, 55 ns
  litary : 25*, 30, 40, 50 ns
Wide temperature range : 55 °C to + 125 °C
67203L/204L low power
  203V/204V very low power
Fully expandable by word width or depth
Asynchronous read/write operations
Empty, full and half flags in single device mode
Retransmit capability
Bi-directional applications
Battery back-up operation 2 V data retention
TTL compatible
Single 5 V ± 10 % power supply (1)
High performance SCMOS technology

* Preview. Please Consult Sales.
(1) 3.3 V versions are also available please consult sales.


Pinout




Specifications

Supply voltage (VCC GND) . . . . . . . . . . . . . . . . . . 0.3 V to 7.0 V
Input or Output voltage applied : . . . . . . . . . . . . . . (GND 0.3 V) to (Vcc + 0.3 V)
Storage temperature : . . . . . . . . . . . . . . . . . . . . . . 65 to + 150

OPERATING RANGE	OPERATING SUPPLY VOLTAGE	OPERATING TEMPERATURE
Military	Vcc = 5 V ± 10 %	55 to + 125
Automotive	Vcc = 5 V ± 10 %	40 to + 125
Industrial	Vcc = 5 V ± 10 %	40 to + 85
Commercial	Vcc = 5 V ± 10 %	0 to + 70

Description

The M67203/204 implement a first-in first-out algorithm, eaturing asynchronous read/write operations. The FULL nd EMPTY flags prevent data overflow and underflow. he Expansion logic allows unlimited expansion in word ize and depth with no timing penalties. Twin address ointers automatically generate internal read and write ddresses, and no external address information are equired for the TEMIC FIFOs. Address pointers are utomatically incremented with the write pin and read in. The 9 bits wide data are used in data communications pplications where a parity bit for error checking is ecessary. The Retransmit pin resets the Read pointer to ero without affecting the write pointer. This is very seful for retransmitting data when an error is detected in he system.

Using an array of eigh transistors (8 T) memory cell and abricated with the state of the art 1.0 m lithography amed SCMOS, the M 67203/204 combine an extremely ow standby supply current (typ = 1.0 A) with a fast ccess time at 25 ns over the full temperature range. All ersions offer battery backup data retention capability ith a typical power consumption at less than 2 W.

For military/space applications of M67203/204  that demand superior evels of performance and reliability the M 67203/204 is rocessed according to the methods of the latest revision f the MIL STD 883 (class B or S) and/or ESA SCC 9000.