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Part Number: M74HC4049B1R
Description: The M74HC4049B1R is an high speed CMOS HEX BUFFER (INVERTING) fabricated with silicon gate C2MOS techn...


Description: The M74HC4049B1R is an high speed CMOS HEX BUFFER (INVERTING) fabricated with silicon gate C2MOS techn...
The M74HC4049B1R is an high speed CMOS HEX BUFFER (INVERTING) fabricated with silicon gate C2MOS technology.The internal circuit is composed of 2 stage inverters, which enables high noise immunity and a stable output.The Vcc side diodes are designed to allow logic-level conversion from high-level voltages (up to 13V) to low level voltages.
Features of the M74HC4049B1R are:(1)high speed:tPD = 8ns (TYP.) at VCC = 6V;(2)low power dissipation:ICC =1A(MAX.) at TA=25;(3)high noise immunity:VNIH = VNIL = 28 % VCC (MIN.);(4)symmetrical output impedance:|IOH| = IOL = 6mA (MIN);(5)balanced propagation delays:tPLH @ tPHL;(6)wide operating voltage range is VCC (OPR) = 2V to 6V;(7)pin and function compatible with 74 series 4049.
The absolute maximum ratings of the M74HC4049B1R can be summarized as:(1):the symbol is Vcc,the parameter is supply voltage,the rating is -0.5 to 7,the unit is V;(2):the symbol is VI,the parameter is input voltage,the rating is -0.5 to 15,the unit is V;(3):the symbol is VO,the parameter is output voltage,the rating is -0.5 to Vcc+0.5,the unit is V;(4):the symbol is IIK,the parameter is DC input diode current,the rating is -20,the unit is mA;(5):the symbol is IOK,the parameter is DC output diode current,the rating is ±20,the unit is mA;(6):the symbol is IO,the parameter is DC output current,the rating is ±25,the unit is mA;(7):the symbol is Icc or IGND,the parameter is DC Vcc or ground current,the rating is ±50,the unit is mA;(8):the symbol is PD,the parameter is power dissipation,the rating is 500,the unit is mW;(9):the symbol is Tstg,the parameter is operating temperature,the rating is -65 to +150,the unit is ;(10):the symbol is TL,the parameter is lead temperature(10 sec),the rating is 300,the unit is .
M74HC4049B1R
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