M74HCT04M1R

The M74HCT04M1R is one member of the M74HCT04 family which is designed as the high speed CMOS inverter that is fabricated in silicon gate CMOS technology. This device requires the same 3-STATE control input G to be taken high to make the output go into the high impedance state, and all inputs of it are equipped with protection circuits against static discharge and transient excess voltage.

Features of the M74HCT04M1R are:(1)high speed: tPD = 8 ns (typ.) AT Vcc = 5 V ; (2)lowpower dissipation: Icc = 4 mA (max.) AT 25 °C ; (3)output drive capabil-ity: 15 LSTTL loads ; (4)balanced propagation delays: tPLH = tPHL ; (5)symmetrical output impedance: IOL = zIOHz = 6 mA (min.) ; (6)high noise immunity: VNIH = VNIL = 28 % Vcc (min.) ; (7)wide operating voltage range: VCC (opr) = 2 V TO 6 V ; (8)pin and function compatible with 54/74LS125/126.

The absolute maximum ratings of the M74HCT04M1R can be summarized as:(1)supply voltage: -0.5 to +7 V;(2)DC input voltage: -0.5 to Vcc+0.5 V;(3)DC output voltage: -0.5 to Vcc+0.5 V;(4)DC input diode current: ±20 mA;(5)DC output diode current: ±20 mA;(6)DC output source sink current per output pin: ±25 mA;(7)DC Vcc or ground current:±50 mA;(8)power dissipation:500 mW;(9)storage temperature:-65 to +150;(10)lead temperature (10 sec): 300. If you want to know more information such as the electrical characteristics about the M74HCT04M1R, please download the datasheet in www.seekic.com or www.chinaicmart.com .