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Part Number: MA9264
Description: The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performanc...
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MA9264
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General Description
MA9264 General Description
The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5mm technology.
The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when chip select is in the HIGH state.
See Application Note "Overview of the Dynex Semiconductor Radiation Hard 1.5mm CMOS/SOS SRAM Range".
MA9264 Maximum Ratings
|
Symbol |
Parameter |
Min. |
Max. |
Unit |
|
VCC |
Supply Voltage |
-0.5 |
7.0 |
V |
|
VI |
Input Voltage |
-0.3 |
VDD+0.3 |
V |
|
TA |
Operating Temperature |
-55 |
125 |
°C |
|
TS |
Storage Temperature |
-65 |
150 |
°C |
stress rating only and functlonal operation of the device at these condltions, or at
any other condition above those indicated in the operations section of this specific
ation, is not Implied Exposure to absolute maxlmum rating conditions for extended
perlods may affect device reliability.
MA9264 Features
·1.5mm CMOS-SOS Technology
·Latch-up Free
·Fast Access Time 70ns Typical
·Total Dose 106 Rad(Si)
·Transient Upset >1011 Rad(Si)/sec
·SEU 4.3 x 10-11 Errors/bitday
·Single 5V Supply
·Three State Output
·Low Standby Current 100mA Typical
·-55°C to +125°C Operation
·All Inputs and Outputs Fully TTL or CMOS Compatible
·Fully Static Operation
·Latch-up Free
·Fast Access Time 70ns Typical
·Total Dose 106 Rad(Si)
·Transient Upset >1011 Rad(Si)/sec
·SEU 4.3 x 10-11 Errors/bitday
·Single 5V Supply
·Three State Output
·Low Standby Current 100mA Typical
·-55°C to +125°C Operation
·All Inputs and Outputs Fully TTL or CMOS Compatible
·Fully Static Operation
MA9264
PDF/DataSheet Download
- Datasheet: MA9264
- File Size: 245926 KB
- Manufacturer: DYNEX [Dynex Semiconductor]
- Click here to Download
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