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MAAPGM0035

Features: ·2.5-5.5 GHz Operation·1.6 Watt Saturated Output Power Level·Variable Drain Voltage (4-10V) Operation·Self-Aligned MSAG® MESFET Process·High Performance Ceramic Bolt Down PackageApplication·WLL·MMDS·SatComDescriptionThe MAAPGM0035 is a packaged, 2-stage, 1.6 W power amplifier with on...

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SeekIC No. : 004408052 Detail

MAAPGM0035: Features: ·2.5-5.5 GHz Operation·1.6 Watt Saturated Output Power Level·Variable Drain Voltage (4-10V) Operation·Self-Aligned MSAG® MESFET Process·High Performance Ceramic Bolt Down PackageApplic...

MAAPGM0035 Data Sheet

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Part Number:
MAAPGM0035
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Features:

·2.5-5.5 GHz Operation
·1.6 Watt Saturated Output Power Level
·Variable Drain Voltage (4-10V) Operation
·Self-Aligned MSAG® MESFET Process
·High Performance Ceramic Bolt Down Package


Application

·WLL
·MMDS
·SatCom


Description

The MAAPGM0035 is a packaged, 2-stage, 1.6 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications.

Each device MAAPGM0035 is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM's GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process.




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