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MFG:M/A-COM  Package Cooled:N/A  D/C:N/A  

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Part Number: MAAPGM0036

 

MFG: M/A-COM

Package Cooled: N/A

D/C: N/A

Description: The MAAPGM0036 is a packaged, 2-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down...


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MAAPGM0036 General Description


The MAAPGM0036 is a packaged, 2-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications.

Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM's GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. M/A-COM's MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.

MAAPGM0036 Features

· 1.2 Watt Saturated Output Power Level
· Variable Drain Voltage (4-10V) Operation
· Self-Aligned MSAG® Process

MAAPGM0036 Typical Application

·2.5-2.7 GHz MMDS
·GPS
·Radar
·Telemetry

MAAPGM0036 datasheet

MAAPGM0036
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