MAAPGM0036

Features: · 1.2 Watt Saturated Output Power Level· Variable Drain Voltage (4-10V) Operation· Self-Aligned MSAG® ProcessApplication·2.5-2.7 GHz MMDS·GPS·Radar·TelemetryDescriptionThe MAAPGM0036 is a packaged, 2-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down ceramic packa...

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SeekIC No. : 004408053 Detail

MAAPGM0036: Features: · 1.2 Watt Saturated Output Power Level· Variable Drain Voltage (4-10V) Operation· Self-Aligned MSAG® ProcessApplication·2.5-2.7 GHz MMDS·GPS·Radar·TelemetryDescriptionThe MAAPGM0036 i...

floor Price/Ceiling Price

Part Number:
MAAPGM0036
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

· 1.2 Watt Saturated Output Power Level
· Variable Drain Voltage (4-10V) Operation
· Self-Aligned MSAG® Process



Application

·2.5-2.7 GHz MMDS
·GPS
·Radar
·Telemetry



Description

The MAAPGM0036 is a packaged, 2-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications.

Each device MAAPGM0036 is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM's GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. M/A-COM's MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.




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