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MB2374
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Part Number: MB2374

Description: The MB2374 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high ou...

MB2374 General Description

The MB2374 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The MB2374 has two 8-bit, edge triggered registers, with each register coupled to eight 3-State output buffers. The two sections of each register are controlled independently by the clock (nCP) and Output Enable (nOE) control gates.

Each register is fully edge triggered. The state of each D input, one set-up time before the Low-to-High clock transition, is transferred to the corresponding flip-flop's Q output.

The 3-State output buffers are designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors. Each active-Low Output Enable (nOE) controls all eight 3-State buffers for its register independent of the clock operation.

When nOE is Low, the stored data appears at the outputs for that register. When nOE is High, the outputs for that register are in the High-impedance "OFF" state, which means they will neither drive nor load the bus.

MB2374 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
V_CC	DC supply voltage		0.5 to +7.0	V
I_IK	DC input diode current	V_I < 0	18	mA
V_I	DC input voltage3		1.2 to +7.0	V
I_OK	DC output diode current	V_O < 0	50	mA
V_OUT	DC output voltage3	output in Off or High state	0.5 to +5.5	V
I_OUT	DC output current	output in Low state	128	mA
T_stg	Storage temperature range		65 to 150	°C

NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

MB2374 Features

• Two 8-bit positive edge triggered registers
• Live insertion/extraction permitted
• Power-up 3-State
• Power-up reset
• Multiple V_CCand GND pins minimize switching noise
• 3-State output buffers
• Output capability: +64mA/32mA
• Latch-up protection exceeds 500mA per Jedec Std 17
• ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model

MB2374 Connection Diagram

MB2374 datasheet

MB2374
PDF/DataSheet Download

Datasheet: MB2374
File Size: 81959 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Click here to Download

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