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Part Number: MB811L323229-12/18
Description: The Fujitsu MB811L323229 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*) cont...


Description: The Fujitsu MB811L323229 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*) cont...
The Fujitsu MB811L323229 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*) containing 33,554,432 memory cells accessible in a 32-bit format. The MB811L323229 features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.
The MB811L323229 is utilized using Fujitsu advanced FCRAM core technology and designed for low power consumption and low voltage operation than regular synchronous DRAM (SDRAM).
The MB811L323229 is dedicated for SiP (System in a package), and ideally suited for various embedded/ consumer applications including digital AVs and image processing where a large band width and low power consumption memory is needed.
| Parameter |
Conditions |
Rating |
Units | |
|
Min |
Max | |||
| Voltage of VCCQ Supply Relative to VSS | VCCQ |
0.5 |
+4.6 |
V |
| Voltage of VDD Supply Relative to VSS | VDD, VDDI |
0.5 |
+3.6 |
V |
| Voltage at Any Pin Relative to VSS | VIN, VOUT |
0.5 |
+4.6 |
V |
| Short Circuit Output Current | IOUT |
50 |
+50 |
mA |
| Power Dissipation | PD |
-- |
1.0 |
W |
| Storage Temperature | TSTG |
55 |
+125 |
°C |
MB80101BAN
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