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Description: The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,...


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MB81F641642D-75 General Description


The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 16-bit format. The MB81F641642D features a fully synchronousoperation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F641642D SDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM.

The MB81F641642D is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed.

MB81F641642D-75 Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage of VCC Supply Relative to VSS

Voltage at Any Pin Relative to VSS

Short Circuit Output Current

Power Dissipation

Storage Temperature
VCC, VCCQ

VIN, VOUT

IOUT

PD

TSTG
0.5 to +4.6

0.5 to +4.6

50 to +50

1.3

55 to +125
V

V

mA

W

°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

MB81F641642D-75 Features

• Single +3.3 V Supply ±0.3 V tolerance
• LVTTL compatible I/O interface
• 4 K refresh cycles every 64 ms
• Four bank operation
• Burst read/write operation and burst read/single write operation capability
• Programmable burst type, burst length, and CAS latency
• Auto-and Self-refresh (every 15.6 ms)
• CKE power down mode
• Output Enable and Input Data Mask

MB81F641642D-75 Connection Diagram

MB81F641642D-75  Connection Diagram

MB81F641642D-75 datasheet

MB81F641642D-75
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