Purchase MB84VA2000-10, In-stock MB84VA2000-10 From SeekIC.
MFG:F Package Cooled:BGA D/C:09+
- Table of contents:
MB84VA2000-10
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Suppliers
DataSheet
General Description
MB84VA2000-10 Maximum Ratings
Storage Temperature ..................................................................................................55°C to +125°C
Ambient Temperature with Power Applied ..................................................................25°C to +85°C
Voltage with Respect to Ground All pins (Note) ..........................................................0.3 V to VCCf +0.5 V
0.3 V to VCCs +0.5 V
VCCf/VCCs Supply (Note) ..............................................................................................0.3 V to +4.6 V
Note: Minimum DC voltage on input or I/O pins are 0.5 V. During voltage transitions, inputs may negativeovershoot
VSS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins are VCCf +0.5 V or VCCs
+0.5 V. During voltage transitions, outputs may positive overshoot to VCC +2.0 V for periods of up to 20 ns.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum rating conditions. Do not exceed these ratings.
Ambient Temperature with Power Applied ..................................................................25°C to +85°C
Voltage with Respect to Ground All pins (Note) ..........................................................0.3 V to VCCf +0.5 V
0.3 V to VCCs +0.5 V
VCCf/VCCs Supply (Note) ..............................................................................................0.3 V to +4.6 V
Note: Minimum DC voltage on input or I/O pins are 0.5 V. During voltage transitions, inputs may negativeovershoot
VSS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins are VCCf +0.5 V or VCCs
+0.5 V. During voltage transitions, outputs may positive overshoot to VCC +2.0 V for periods of up to 20 ns.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum rating conditions. Do not exceed these ratings.
MB84VA2000-10 Features
• Power supply voltage of 2.7 to 3.6 V
• High performance
100 ns maximum access time
• Operating Temperature
20 to +85°C
- FLASH MEMORY
• Minimum 100,000 write/erase cycles
• Sector erase architecture
One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VA2000: Top sector
MB84VA2001: Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to "MBM29LV800TA/BA" data sheet in detailed function
- SRAM
• Power dissipation
Operating : 35 mA max.
Standby : 50 A max.
• Power down features using CE1s and CE2s
• Data retention supply voltage: 2.0 V to 3.6 V
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
• High performance
100 ns maximum access time
• Operating Temperature
20 to +85°C
- FLASH MEMORY
• Minimum 100,000 write/erase cycles
• Sector erase architecture
One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VA2000: Top sector
MB84VA2001: Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to "MBM29LV800TA/BA" data sheet in detailed function
- SRAM
• Power dissipation
Operating : 35 mA max.
Standby : 50 A max.
• Power down features using CE1s and CE2s
• Data retention supply voltage: 2.0 V to 3.6 V
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
MB84VA2000-10
PDF/DataSheet Download
- Datasheet: MB84VA2000-10
- File Size: 356677 KB
- Manufacturer: FUJITSU [Fujitsu Media Devices Limited]
- Click here to Download
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