MB84VA2101-10

• Supplier

Maximum Ratings

Storage Temperature ..................................................................................................–55°C to +125°C
Ambient Temperature with Power Applied ..................................................................–25°C to +85°C
Voltage with Respect to Ground All pins (Note) ..........................................................–0.3 V to V_CCf +0.5 V
                                                                                                                                     –0.3 V to V_CCs +0.5 V
VCCf/VCCs Supply (Note) ..............................................................................................–0.3 V to +4.6 V
Note: Minimum DC voltage on input or I/O pins are –0.5 V. During voltage transitions, inputs may negativeovershoot
           V_SS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins are V_CCf +0.5 V or V_CCs
           +0.5 V. During voltage transitions, outputs may positive overshoot to V_CC +2.0 V for periods of up to 20 ns.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
                  temperature, etc.) in excess of absolute maximum rating conditions. Do not exceed these ratings.

Features

• Power supply voltage of 2.7 to 3.6 V
• High performance
   100 ns maximum access time
• Operating Temperature
   –20 to +85°C
— FLASH MEMORY
• Minimum 100,000 write/erase cycles
• Sector erase architecture
   One 16 K byte, two 8 K bytes, one 32 K byte, and thirty one 64 K bytes.
   Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
   MB84VA2100: Top sector
   MB84VA2101: Bottom sector
• Embedded Erase^TM Algorithms
   Automatically pre-programs and erases the chip or any sector
• Embedded Program^TM Algorithms
   Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
   Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
   When addresses remain stable, automatically switch themselves to low power mode.
• Low V_CC write inhibit ≤2.5 V
• Erase Suspend/Resume
   Suspends the erase operation to allow a read in another sector within the same device
   Please refer to "MBM29LV160T/B" data sheet in detailed function
— SRAM
• Power dissipation
   Operating : 35 mA max.
   Standby : 50 μA max.
• Power down features using CE1s and CE2s
• Data retention supply voltage: 2.0 V to 3.6 V
   Embedded Erase^TM and Embedded Program^TM are trademarks of Advanced Micro Devices, Inc.

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