MBM29LV016T Features
•Single 3.0 V read, program and erase
Minimizes system level power requirements
•Compatible with JEDEC-standard commands
Uses same software commands as E2 PROMs
•Compatible with JEDEC-standard world-wide pinouts
40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
•Minimum 100,000 program/erase cycles
•High performance
80 ns maximum access time
•Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
•Boot Code Sector Architecture
T = Top sector
B = Bottom sector
•Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
•Embedded programTM Algorithms
Automatically programs and verifies data at specified address
•DATA Polling and Toggle Bit feature for detection of program or erase cycle completion
•Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
•Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
•Low VCC write inhibit 2.5 V
•Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
•Sector protection
Hardware method disables any combination of sectors from program or erase operations
•Sector Protection set function by Extended sector protect command
•Temporary sector unprotection
Temporary sector unprotection via theRESET pin
•In accordance with CFI (Common Flash Memory Interface)
MBM29LV016T Connection Diagram
Map list: ABCDEFGHIJKLMNOPQRSTUVWXYZ 0123456789All