Purchase MBM29LV650UE-90/12, In-stock MBM29LV650UE-90/12 From SeekIC.
Part Number: MBM29LV650UE-90/12
Description: The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. Th...
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MBM29LV650UE-90/12
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DataSheet
General Description
MBM29LV650UE-90/12 General Description
The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls.
The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash standard.Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations.Typically, each sector can be programmed and verified in about 0.5 seconds.
MBM29LV650UE-90/12 Maximum Ratings
| Parameter |
Symbol | Rating | Unit | |
| Min. | Max. | |||
| Storage Temperature | Tstg | 55 | +125 | °C |
| Ambient Temperature with Power Applied | TA | 40 | +85 | °C |
| with Respect to Ground All Pins Except A9, OE, ACC, and RESET (Note 1) |
VIN, VOUT | 0.5 | VCC +0.5 | V |
| Power Supply Voltage (Note 1) |
VCC | 0.5 | +4.0 | V |
| A9, OE, ACC, and RESET(Note 2) |
VIN | 0.5 | +13.0 | V |
| Power Supply Voltage | VCCq | 0.2 | +7.0 | V |
Notes: 1. Minimum DC voltage on input or l/O pins is -0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or l/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods of up to 20 ns.
2. Minimum DC input voltage on A9, OE, ACC, and RESET pins is 0.5 V. During voltage transitions, A9,OE, ACC, and RESET pins may undershoot VSS to -2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage (VIN-VCC) does not exceed 9.0 V. Maximum DC input voltage on A9,OE, ACC, and RESET pins is +13.0 V which may overshoot to +14.0 V for periods of up to 20 ns.
MBM29LV650UE-90/12 Features
• 0.23 mm Process Technology
• Single 3.0 V read, program and erase
Minimizes system level power requirements
• Compatible with JEDEC-standards
Uses same software commands with single-power supply Flash
• Address don't care during the command sequence
• Industry-standard pinouts
48-pin TSOP (I) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance
90 ns maximum access time
• Flexible sector architecture
One hundred twenty-eight 32K word sectors Any combination of sectors can be concurrently erased. Also supports full chip erase
• Hidden ROM (Hi-ROM) region
128 word of Hi-ROM, accessible through a new "Hi-ROM Enable" command sequence Factory serialized and protected to provide a secure electronic serial number (ESN)
•WP input pin
At VIL, allows protection of first or last 32K word sector, regardless of sector protection/unprotection status
At VIH, allows removal of protection
MBM29LV650UE: has the function to protect the last 32K word sector (SA 127)
MBM29LV651UE: has the function to protect the first 32K word sector (SA 0)
• ACC input pin
At VACC, increases program performance
• Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded programTM* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin
This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)
*: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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PDF/DataSheet Download
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- File Size: 79491 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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