MBM29LV800T

The MBM29LV800T is designed as one kind of 8M-bit, 3.0 V-only flash memory that offers access times 70 ns and 120 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. This device also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors.

Features of the MBM29LV800T are:(1)single 3.0 V read, program, and erase;(2)compatible with JEDEC-standard commands;(3)compatible with JEDEC-standard world-wide pinouts;(4)minimum 100,000 program/erase cycles;(5)high performance: 70 ns maximum access time;(6)automatically pre-programs and erases the chip or any sector;(7)automatically writes and verifies data at specified address;(8)data polling and toggle bit feature for detection of program or erase cycle completion;(9)hardware method for detection of program or erase cycle completion;(10)suspends the erase operation to allow a read in another sector within the same device.

The absolute maximum ratings of the MBM29LV800T can be summarized as:(1)storage temperature: -55°C to +125°C;(2)ambient temperature with power applied: -40°C to +85°C;(3)voltage with respect to ground all pins except A9, OE, RESET: -0.5 V to VCC+0.5 V;(4)Vcc: -0.5 V to +5.5 V;(5)A9, OE, and RESET:-0.5 V to +13.0 V. If you want to know more information such as the electrical characteristics about the MBM29LV800T, please download the datasheet in www.seekic.com or www.chinaicmart.com.