Purchase MBM29SL800TE, In-stock MBM29SL800TE From SeekIC.
Part Number: MBM29SL800TE
Description: The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512...
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MBM29SL800TE
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DataSheet
General Description
MBM29SL800TE General Description
The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard PROM programmers.
MBM29SL800TE Maximum Ratings
| Symbol | Parameter | Rating | Unit | |
| min. | max. | |||
| Tstg | Storage Temperature | -55 | +125 | |
| TA | Ambient Temperature with Power Applied | -40 | +85 | |
| VIN, VOUT | Voltage with Respect to Ground All pins except A9, OE, and RESET *1, *2 |
-0.3 | VCC + 0.5 | V |
| VIN | A9, OE, and RESET *1, *3 | -0.3 | +11.5 | V |
| VCC | Power Supply Voltage *1 | -0.5 | +3.0 | V |
*1: Voltage is defined on the basis of VSS = GND = 0 V.
*2:Minimum DC voltage on input or I/O pins is −0.3 V. During voltage transitions, input or I/O pins may undershoot
VSS to −2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC + 0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC + 2.0 V for periods of up to 20 ns.
*3:Minimum DC input voltage on A9, OE and RESET pins is −0.3 V. During voltage transitions, A9, OE and RESET
pins may undershoot VSS to −2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage
(VIN - VCC) does not exceed +9.0 V. Maximum DC input voltage on A9, OE and RESET pins is +11.5 V which may overshoot to +12.5 V for periods of up to 20 ns.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
MBM29SL800TE Features
• 0.23 µ µ µ µm Process Technology
• Single 1.8 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard world-wide pinouts
48-ball FBGA (Package suffix : PBT)
45-ball SCSP (Package suffix : PW)
• Minimum 100,000 program/erase cycles
• High performance
90 ns maximum access time
• Sector erase architecture
One 8 Kword, two 4 Kwords, one 16 Kword, and fifteen 32 Kwords sectors in word mode
One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and fifteen 64 Kbytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
•Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Sector protection
Hardware method disables any combination of sectors from program or erase operations
• Sector Protection set function by Extended sector Protect command
• Fast programming Function by Extended Command
• Temporary sector unprotection
Temporary sector unprotection via the RESET pin
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
• Single 1.8 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard world-wide pinouts
48-ball FBGA (Package suffix : PBT)
45-ball SCSP (Package suffix : PW)
• Minimum 100,000 program/erase cycles
• High performance
90 ns maximum access time
• Sector erase architecture
One 8 Kword, two 4 Kwords, one 16 Kword, and fifteen 32 Kwords sectors in word mode
One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and fifteen 64 Kbytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
•Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Sector protection
Hardware method disables any combination of sectors from program or erase operations
• Sector Protection set function by Extended sector Protect command
• Fast programming Function by Extended Command
• Temporary sector unprotection
Temporary sector unprotection via the RESET pin
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
MBM29SL800TE-10PBT
PDF/DataSheet Download
- Datasheet: MBM29SL800TE-10PBT
- File Size: 462245 KB
- Manufacturer: SPANSION [SPANSION]
- Click here to Download
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