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MFG:HITACHI  D/C:1IGBT: 1200A3300V  

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MBN Series Datasheet download

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Part Number: MBN1200D33A

 

MFG: HITACHI

 

D/C: 1IGBT: 1200A3300V

 

Urgent Purchase

MBN1200D33A Maximum Ratings

Item
Symbol
Unit
MBN1200D33A
Collector Emitter Voltage
VCES
V
3,300
Gate Emitter Voltage
VGES
V
±20
Collector Current
DC
IC
A
1,200
1ms
ICp
2,400
Forward Current
DC
IF
A
1,200
1ms
IFM
2,400
Collector Power Dissipation
Pc
W
12,000
Junction Temperature
Tj
°C
-40 ~ +125
Storage Temperature
Tstg
°C
-40 ~ +125
Isolation Voltage
VISO
VRMS
5,400(AC 1 minute)
Screw Torque
Terminals(M4/M8)
N.m
2/10 (1)
Mounting(M6)
6 (2)
Notes: (1)Recommended Value 1.8±0.2/9±1N.m (2)Recommended Value 5.5±0.5N.m

MBN1200D33A Features

· High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles)
· low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
·High speed,low loss IGBT module.
·Low driving power due to low input capacitance MOS gate.
·High reliability,high durability module.
· Isolated head sink (terminal to base).

MBN1200D33A datasheet

MBN1200D33A
PDF/DataSheet Download

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