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MFG:HITACHI D/C:1IGBT: 400A1200V
- Table of contents:
MBN400GR12
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Suppliers
DataSheet
General Description
MBN400GR12 Maximum Ratings
| Item | Symbol | Unit | Value | |
| Collector-Emitter Voltage | VCES | V | 1200 | |
| Gate-Emitter Voltage | VGES | V | ±20 | |
| Collector Current | DC | IC | A | 400 |
| 1ms | ICP | 800 | ||
| Forward Current | DC | IF | A | 400 *1 |
| 1ms | IFM | 800 | ||
| Collector Power Dissipation | PC | W | 2080 | |
| Junction Temperature | Tj | °C | -40 ~ +150 | |
| Storage Temperature | Tstg | °C | 40 ~ +125 | |
| Isolation Voltage | Viso | VRMS | 2500(AC 1 minute) | |
| Screw Torque | Terminals (M4/M6) | - | N`m (kgf`cm) |
1.37(14) / 2.94(30) *2 |
| Mounting | 2.94(30) *3 | |||
*2: Recommended value 1.18 / 2.45 N`m (12 / 25 kgf`cm)
*3: Recommended value 2.45 N`m (25 kgf`cm)
MBN400GR12 Features
· Low saturation voltage and high speed.
· Low turn-OFF switching loss.
· Low noise due to build-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
· High reliability structure.
· Isolated heat sink (terminals to base).
· Low turn-OFF switching loss.
· Low noise due to build-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
· High reliability structure.
· Isolated heat sink (terminals to base).
MBN400GR12
PDF/DataSheet Download
- Datasheet: MBN400GR12
- File Size: 70633 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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