Purchase MBN400GS12AW, In-stock MBN400GS12AW From SeekIC.
MFG:HITACHI D/C:1IGBT: 400A1200V
- Table of contents:
MBN400GS12AW
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Suppliers
DataSheet
General Description
MBN400GS12AW Maximum Ratings
| Item | Symbol | Unit | MBN400GS12AW | |
| Collector Emitter Voltage | VCES | V | 2,000 | |
| Gate Emitter Voltage | VGES | V | ±20 | |
| Collector Current | DC | IC | A | 400 |
| 1ms | ICp | 800 | ||
| Forward Current | DC | IF | A | 400 (1) |
| 1ms | IFM | 800 | ||
| Collector Power Dissipation | Pc | W | 2,000 | |
| Junction Temperature | Tj | °C | -40 ~ +150 | |
| Storage Temperature | Tstg | °C | -40 ~ +125 | |
| Isolation Voltage | VISO | VRMS | 2,500(AC 1 minute) | |
| Screw Torque | Terminals | - | N.m (kgf.cm) |
1.37(14)/2.94(30) (2) |
| Mounting | - | 2.94(30) (3) | ||
(2)Recommended Value 1.18/2.45N.m(12/25kgf.cm) (3)Recommended Value 2.45N.m(25kgf.cm)
MBN400GS12AW Features
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
MBN400GS12AW
PDF/DataSheet Download
- Datasheet: MBN400GS12AW
- File Size: 113602 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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