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MBR Series Datasheet download

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Part Number: MBR1660

 

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MBR1660 Maximum Ratings

TA = 25°C unless otherwise noted
Symbol Parameter Value Units
IO Average Rectified Current
.375" lead length @ TA = 125°C
16 A
if(repetitive) Peak Repetitive Forward Current
(Rated VR , Square Wave, 20 KHz) @ TA = 125°C
32 A
if(surge) Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
150 A
PD Total Device Dissipation
Derate above 25°C
2.0
16.6
W
mW/°C
RJA Thermal Resistance, Junction to Ambient 60 °C/W
RJL Thermal Resistance, Junction to Lead 1.5 °C/W
Tstg Storage Temperature Range -65 to +175 °C
TJ Operating Junction Temperature -65 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

MBR1660 Features

• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
   inverters, free wheeling, and polarity
   protection applications.
• Metal silicon junction, majority carrier
   conduction.
• High current capacity, low forward
   voltage drop.
• Guard ring for over voltage protection.

MBR1660 datasheet

MBR1660
PDF/DataSheet Download

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