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Part Number: MBR30HxxCT

 

 

 

 

 

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MBR30HxxCT Maximum Ratings

Maximum Ratings(TC= 25 °C unless otherwise noted)
Parameter

Symbol MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT Unit
Maximum repetitive peak reverse voltage
VRRM 35 45 50 60 V
Working peak reverse voltage
VRWM 35 45 50 60 V
Maximum DC blocking voltage
VDC 35 45 50 60 V
Max.average forward rectified current Totaldevice
(see fig.1) Per leg

IF(AV)
30
15
A
Peak repetitive forward current at TC= 150 °C per leg
(rated VR, 2.0KHz sq.wave)

IFRM 30 A
Non-repetitive avalanche energy per leg
at 25 °C, IAS= 4 A, L = 10 mH

EAS 80 mJ
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg
IFSM 150 A
Peak repetitive reverse surge current per leg
at tp= 2.0 µs, 1 KHZ

IRRM 1.0 0.5 A
Peak non-repetitive reverse energy (8/20 µs waveform)
ERSM 25 20 mJ
Electrostatic discharge capacitor voltage
Human body model:C = 100 pF, R = 1.5 kΩ
VC 25 kV
Voltage rate of change (rated VR) dv/dt 10,000 V/µs
Operating junction temperature range TJ 65 to +175 °C
Storage temperature range
TSTG 65 to +175 °C
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH 30%
VISOL 4500(1)
3500(2)
1500(3)
V

MBR30HxxCT Features

• Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature

MBR30HxxCT datasheet

MBR30HXXCT
PDF/DataSheet Download

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